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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BZT03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 Jun 11
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Zener working voltage range: 7.5 to 270 V for 38 types * Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types * Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed
BZT03 series
construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation
a
MAM204
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS Ttp = 25 C; lead length 10 mm; see Fig.2 Tamb = 45 C; see Fig.2; PCB mounted (see Fig.6)
MIN. - - -
MAX. 3.25 1.30 10 600 300 +175 +175
UNIT W W W W W C C
PZRM PZSM PRSM Tstg Tj
repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 s; square pulse; Tj = 25 C prior to surge; see Fig.3 10/1000 s exponential pulse (see Fig.4); Tj = 25 C prior to surge
- - -65 -65
1996 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.5 A; see Fig.5
BZT03 series
MAX. 1.2 V
UNIT
Per type when used as voltage regulator diodes Tj = 25 C unless otherwise specified. TYPE No. SUFFIX
(1)
WORKING VOLTAGE VZ (V) at IZ MIN. NOM. 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 MAX. 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96
DIFFERENTIAL TEMPERATURE TEST RESISTANCE COEFFICIENT CURRENT rdif () at IZ TYP. 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 MAX. 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 SZ (%/K) at IZ MIN. 0.00 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 MAX. 0.07 0.08 0.08 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 IZ (mA) 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5
REVERSE CURRENT at REVERSE VOLTAGE IR (A) MAX. 750 600 20 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VR (V) 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68
C7V5 C8V2 C9V1 C10 C11 C12 C13 C15 C16 C18 C20 C22 C24 C27 C30 C33 C36 C39 C43 C47 C51 C56 C62 C68 C75 C82 C91
7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85
1996 Jun 11
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
TYPE No. SUFFIX
(1)
WORKING VOLTAGE VZ (V) at IZ MIN. NOM. 100 110 120 130 150 160 180 200 220 240 270 MAX. 106 116 127 141 156 171 191 212 233 256 289
DIFFERENTIAL TEMPERATURE TEST RESISTANCE COEFFICIENT CURRENT rdif () at IZ TYP. 60 80 80 110 130 150 180 200 350 400 450 MAX. 200 250 250 300 300 350 400 500 750 850 1000 SZ (%/K) at IZ MIN. 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 IZ (mA) 5 5 5 5 5 5 5 5 2 2 2
REVERSE CURRENT at REVERSE VOLTAGE IR (A) MAX. 1 1 1 1 1 1 1 1 1 1 1 VR (V) 75 82 91 100 110 120 130 150 160 180 200
C100 C110 C120 C130 C150 C160 C180 C200 C220 C240 C270 Note
94 104 114 124 138 153 168 188 208 228 251
1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100.
1996 Jun 11
4
Philips Semiconductors
Product specification
Voltage regulator diodes
Per type when used as transient suppressor diodes Tj = 25 C unless otherwise specified. REVERSE BREAKDOWN VOLTAGE V(BR)R (V) at Itest MIN. BZT03-C7V5 BZT03-C8V2 BZT03-C9V1 BZT03-C10 BZT03-C11 BZT03-C12 BZT03-C13 BZT03-C15 BZT03-C16 BZT03-C18 BZT03-C20 BZT03-C22 BZT03-C24 BZT03-C27 BZT03-C30 BZT03-C33 BZT03-C36 BZT03-C39 BZT03-C43 BZT03-C47 BZT03-C51 BZT03-C56 BZT03-C62 BZT03-C68 BZT03-C75 BZT03-C82 BZT03-C91 BZT03-C100 BZT03-C110 BZT03-C120 BZT03-C130 BZT03-C150 BZT03-C160 1996 Jun 11 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 TEMPERATURE COEFFICIENT TEST CURRENT CLAMPING VOLTAGE at IRSM (A) note 1 26.5 24.4 22.7 20.3 19.1 17.7 15.9 14.4 13.1 11.7 10.6 9.7 8.9 7.9 7.1 6.5 6.0 5.5 4.9 4.6 4.2 3.8 3.5 3.2 2.9 2.6 2.4 2.2 2.0 1.8 1.6 1.5 1.3
BZT03 series
TYPE NUMBER
REVERSE CURRENT at STAND-OFF VOLTAGE IR (A) MAX. 1500 1200 100 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 at VR (V) 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130
SZ (%/K) at Itest MIN. 0.00 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.07 0.08 0.08 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 5
Itest (mA) 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5
V(CL)R (V) MAX. 11.3 12.3 13.3 14.8 15.7 17.0 18.9 20.9 22.9 25.6 28.4 31.0 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114.0 126 139 152 167 185 204 224
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
TYPE NUMBER
REVERSE BREAKDOWN VOLTAGE V(BR)R (V) at Itest MIN. 168 188 208 228 251 280 310 340 370 400 440 480
TEMPERATURE COEFFICIENT
TEST CURRENT
CLAMPING VOLTAGE at IRSM (A) note 1 1.2 1.1 1.0 0.9 0.8 0.72 0.65 0.60 0.56 0.50 0.45 0.42
REVERSE CURRENT at STAND-OFF VOLTAGE IR (A) MAX. 5 5 5 5 5 5 5 5 5 5 5 5 at VR (V) 150 160 180 200 220 240 270 300 330 360 390 430
SZ (%/K) at Itest MIN. 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
Itest (mA) 5 5 2 2 2 2 2 2 2 2 2 2
V(CL)R (V) MAX. 249 276 305 336 380 419 459 498 537 603 655 707
BZT03-C180 BZT03-C200 BZT03-C220 BZT03-C240 BZT03-C270 BZT03-C300 BZT03-C330 BZT03-C360 BZT03-C390 BZT03-C430 BZT03-C470 BZT03-C510 Note
1. Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 s pulse); see Fig.4. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.6. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 46 100 UNIT K/W K/W
1996 Jun 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
BZT03 series
handbook, halfpage
4
MBH534
104 handbook, halfpage PZSM (W) 103
MBH535
Ptot (W) 3
2
102 1
0 0 100 T (C) 200
10 10-2
10-1
1
tp (ms)
10
Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig 6.
Tj = 25 C prior to surge.
Fig.3 Fig.2 Maximum total power dissipation as a function of temperature.
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse).
IRSM handbook, halfpage (%) 100 90
handbook, halfpage
3
MBH536
IF (A) 2
50 1
10 t t1 t2
MGD521
0 0 1 VF (V) 2
In accordance with "IEC 60-1, Section 8". t1 = 10 s. t2 = 1000 s.
Tj = 25 C.
Fig.4
Non-repetitive peak reverse current pulse definition.
Fig.5
Forward current as a function of forward voltage; typical values.
1996 Jun 11
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
handbook, halfpage
50 25
7 50
2 3
MGA200
Dimensions in mm.
Fig.6 Device mounted on a printed-circuit board.
1996 Jun 11
8
Philips Semiconductors
Product specification
Voltage regulator diodes
PACKAGE OUTLINE
handbook, full pagewidth
k
3.81 max
28 min
Dimensions in mm. The marking band indicates the cathode.
Fig.7 SOD57.
,
4.57 max
BZT03 series
a
0.81 max
28 min
MBC880
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Jun 11
9

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